Datasheet4U Logo Datasheet4U.com

RD0504T - High-Speed Switching Diode

Features

  • Diffused Junction Silicon Diode Low VF.
  • High-Speed Switching Diode.
  • VRRM=400V trr=17ns(typ. )(IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 400 5 Sine wave 10ms, 1 cycle 40 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RD0504T Planar Ultrafast Rectifier ON Semiconductor
RD0506T Planar Ultrafast Rectifier ON Semiconductor
RD05MMP1 Silicon RF Power MOS FET Mitsubishi Electric
RD00HHS1 RoHS Compliance Mitsubishi Electric
RD00HVS1 RoHS Compliance Mitsubishi Electric

Other Datasheets by SANYO (now Panasonic)

Part Number Description
RD0506T High-Speed Switching Diode
RD0106T High-Speed Switching Diode

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Ordering number : ENA1851 RD0504T SANYO Semiconductors DATA SHEET RD0504T Features • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode • • VRRM=400V trr=17ns(typ.)(IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 400 5 Sine wave 10ms, 1 cycle 40 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Package Dimensions unit : mm (typ) 7518-002 6.5 5.0 1.5 4 2.3 0.5 Package Dimensions unit : mm (typ) 7003-001 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 t o 0.2 1.2 0.
Published: |