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RD01MUS2 - Silicon MOSFET Power Transistor

Description

RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

This device have an interal monolithic zener diode from gate to source for ESD protection.

Features

  • High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz.
  • High Efficiency: 65%typ.
  • Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07.

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Other Datasheets by Mitsubishi Electric

Part Number Description
RD01MUS1 Silicon RF Power MOS FET
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Full PDF Text Transcription

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www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. TYPE NAME 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ. •Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.
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