Datasheet4U Logo Datasheet4U.com

RD02MUS2 - RoHS Compliance

Description

RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

This device have an interal monolithic zener diode from gate to source for ESD protection.

Features

  • High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz.
  • High Efficiency:65%typ. (175MHz).
  • High Efficiency:65%typ. (520MHz).
  • Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RD02MUS1B Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor
RD02LUS2 Silicon RF Power MOS FET Mitsubishi
RD0106T High-Speed Switching Diode Sanyo Semicon Device
RD01MUS2B Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor
RD030100 Tubular Capacitors Vishay Siliconix

Other Datasheets by Mitsubishi Electric

Part Number Description
RD02MUS1 Silicon MOSFET Power Transistor
RD00HHS1 RoHS Compliance
RD00HVS1 RoHS Compliance
RD01MUS1 Silicon RF Power MOS FET
RD01MUS2 Silicon MOSFET Power Transistor

Full PDF Text Transcription

Click to expand full text
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES •High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz •High Efficiency:65%typ.(175MHz) •High Efficiency:65%typ.(520MHz) •Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.
Published: |