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RD07MVS2 - Silicon MOSFET Power Transistor

Description

OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection.

Features

  • High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz.
  • High Efficiency: 60%typ. (175MHz).
  • High Efficiency: 55%typ. (520MHz).
  • Integrated gate protection diode 3 (0.25) INDEX MARK (Gate).

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection. 4.9+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 1.0+/-0.05 2 FEATURES •High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz •High Efficiency: 60%typ. (175MHz) •High Efficiency: 55%typ. (520MHz) •Integrated gate protection diode 3 (0.
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