MDIS2N65B - N-Channel Trench MOSFET

MagnaChip

General Description

The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.

MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applications.

Key Features

VDS = 650V.
ID = 1.95A.
RDS(ON) ≤ 4.5Ω @VGS = 10V @VGS = 10V.

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MDIS2N65B n-channel trench mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MDIS2N65B
Manufacturer	MagnaChip
File Size	903.10 KB
Description	N-Channel Trench MOSFET
Datasheet	MDIS2N65B Datasheet

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Full PDF Text Transcription (Reference)

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MDIS2N65B N-channel MOSFET 650V MDIS2N65B N-Channel MOSFET 650V, 1.95A, 4.5Ω General Description The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features  VDS = 650V  ID = 1.95A  RDS(ON) ≤ 4.