MDIS4N65B - N-Channel Trench MOSFET

MagnaChip

General Description

These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

 VDS = 650V  ID = 3.65A  RDS(ON) ≤ 2.2Ω @ VGS = 10V @ VGS = 10V.

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MDIS4N65B n-channel trench mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MDIS4N65B
Manufacturer	MagnaChip
File Size	0.98 MB
Description	N-Channel Trench MOSFET
Datasheet	MDIS4N65B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDIS4N65B N-channel MOSFET 650V (For Lite on Only) MDIS4N65B N-Channel MOSFET 650V, 3.65A, 2.2Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 650V  ID = 3.65A  RDS(ON) ≤ 2.