Datasheet Details
| Part number | MDIS1903 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 796.19 KB |
| Description | Single N-channel Trench MOSFET |
| Datasheet |
 MDIS1903 Datasheet
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General Description
The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDIS1903 is suitable device for DC to DC converter and general purpose applications.
Key Features
- VDS = 100V ID = 12.8A @VGS = 10V RDS(ON) (MAX) < 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case.