Datasheet Details
| Part number | LSGE085R036 |
|---|---|
| Manufacturer | Lonten |
| File Size | 2.36 MB |
| Description | N-channel 85V 120A Power MOSFET |
| Datasheet |
 LSGE085R036 Datasheet
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| Part number | LSGE085R036 |
|---|---|
| Manufacturer | Lonten |
| File Size | 2.36 MB |
| Description | N-channel 85V 120A Power MOSFET |
| Datasheet |
LSGE085R036 Datasheet
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Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using shielded gate trench RDS(on).max@ VGS=10V 3.6mΩ DMOS technology.This advanced technology has ID 120A been especially tailored to minimize on-state resistance,provide superior switching performance, Pin Configuration and with stand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.
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