LSG07N70
Description
Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
750V
RDS(on),max
0.57Ω
21A
Qg,typ
19n C
Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg = 19n C)
- 100% UIS tested
- Ro HS pliant
Applications
- Power faction correction (PFC).
- Switched mode power supplies (SMPS).
- Uninterruptible power supply (UPS).
TO-251 TO-252 TO-220 TO-220F
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1) Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode...
