LSG11N65E
Description
Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(on),max
0.40Ω
30A
Qg,typ
34n C
Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 34n C)
- High body diode ruggedness
- Easy to use
- 100% UIS tested
- Ro HS pliant
TO-251 TO-252,TO-263 TO-220 TO-220MF
TO-247
TO-262
Applications
- PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC
Silverbox, Adapter, LCD & PDP TV, LED Driver,
Server, Tele and UPS.
S N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse2)
Avalanche energy, repetitive3) Avalanche current, repetitive3)
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