LSG04N70A
Description
Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max RDS(on),max
750V 0.96Ω
IDM 12A
Qg,typ
11n C
Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 11n C)
- 100% UIS tested
- Ro HS pliant
TO-251
TO-252
TO-220 TO-220MF D
Applications
- Power faction correction (PFC).
- Switched mode power supplies (SMPS).
- Uninterruptible power supply (UPS).
S N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 3) Avalanche current,...
