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LMP3335SF - 30V P-Channel Enhancement Mode MOSFET

General Description

The P-Channel enhancement mode power field effect transistor is using trench DMOS technology.

Motor Driver Applications POL Applications Load Switch LED Application P

Key Features

  • RDS(ON)=5mΩ@VGS=-10V.
  • RDS(ON)=7.8mΩ@VGS=-4.5V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number LMP3335SF
Manufacturer LFC semi
File Size 760.67 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMP3335SF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP3335SF Rev. 1.0 LMP3335SF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=5mΩ@VGS=-10V  RDS(ON)=7.8mΩ@VGS=-4.5V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficiency fast switching applications. Product Description The P-Channel enhancement mode power field effect transistor is using trench DMOS technology.