LMP3117ZF
Features
- RDS(ON)=13.5mΩ@VGS=-10V
- Fast switching
- Suit for -4.5V Gate Drive Applications
- Green Device Available
- DFN3X3-8L package design mutation mode. This device is well suited for high efficiency fast switching applications.
Product Description
The P-Channel enhancement mode power field effect transistors is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
Applications
- MB / VGA / Vcore
- POL Applications
- Load Switch
- LED Application
Pin Configuration
LMP3117ZF (DFN3X3-8L)
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP3117ZF
P/N LMP3117
Rev....
