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LMP3117DF - 30V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V/-44A, RDS(ON).

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Datasheet Details

Part number LMP3117DF
Manufacturer LFC semi
File Size 966.85 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet LMP3117DF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP3117DF Rev. 1.0 LMP3117DF 30V P-Channel MOSFET Features  -30V/-44A, RDS(ON)<14.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  TO-252-2L package design Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.