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NDT6N60P - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 6.2 A (VGS = 10V).
  • RDS(ON) ＜ 1.5Ω (VGS = 10V).
  • Fast switching capability.
  • Low reverse transfer Capacitance Drain 1 23 123 Unit: mm Gate Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Avalanche Energy Single Pulsed (Note 1) Repetitive Peak Diode Recovery dv/dt (Note.2) Thermal Resistance. Junction- to-A.

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DIP Type N-Channel MOSFET NDT6N60P TO-251 MOSFET ■ Features ● VDS (V) = 600V ● ID = 6.2 A (VGS = 10V) ● RDS(ON) ＜ 1.5Ω (VGS = 10V) ● Fast switching capability ● Low reverse transfer Capacitance Drain 1 23 123 Unit: mm Gate Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Avalanche Energy Single Pulsed (Note 1) Repetitive Peak Diode Recovery dv/dt (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAR PD EAS EAR dv/dt RthJA RthJC TJ Tstg Note.1: L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C Note.2: ISD ≤ 6.