Datasheet4U Logo Datasheet4U.com

NDT014 - N-Channel MOSFET

Datasheet Summary

Description

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted.

📥 Download Datasheet

Datasheet preview – NDT014

Datasheet Details

Part number NDT014
Manufacturer Fairchild
File Size 225.30 KB
Description N-Channel MOSFET
Datasheet download datasheet NDT014 Datasheet
Additional preview pages of the NDT014 datasheet.

📁 Similar Datasheet

  • NDT014 - N-Channel MOSFET (VBsemi)
  • NDT01N60 - N-Channel Power MOSFET (ON Semiconductor)
  • NDT01N60T1G - N-Channel Power MOSFET (ON Semiconductor)
  • NDT02N40 - N-Channel Power MOSFET (ON Semiconductor)
  • NDT02N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDT03N40Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDT28P - 2Gb (x8) DDR3L Synchronous DRAM (Insignis)
  • NDT2955 - P-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)
  • NDT2955 - P-Channel 60V MOSFET (VBsemi)
  • NDT3055 - N-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)
Other Datasheets by Fairchild

Full PDF Text Transcription

Click to expand full text
September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
Published: |