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SMD Type
N-Channel MOSFET NDT15N10
Features
RDS(ON) = 80m @VGS = 10V,ID=8A Low gate charge (Typ=24nC) Low CRSS (Typ=23pF) High switching speed
TO-252
MOSFET
D S
G 1. Gate (G) 2. Drain (D) 3. Source (S)
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current
TC=25 ,TJ=150 TC=70 ,TJ=150
Power Dissipation
TC=25 TC=70
Thermal Resistance.Junction- to-Case (Note.1)
Junction Temperature
Storage Temperature Range
Symbol VDS VGS
ID
IDM
PD
RthJC TJ Tstg
Rating 100 ±20 14.7 13.6 59 34.7 22.2 3.6 150
-55 to 150
Unit V
A
W /W
Note.1: The device mounted on 1in 2 FR4 board with 2 oz copper.
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NDT15N10 Datasheet
