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NDT90N03 - N-Channel MOSFET

Features

  • s.
  • VDS (V) = 30V.
  • ID = 85 A (VGS = 10V).
  • RDS(ON) ＜ 5mΩ (VGS = 10V).
  • RDS(ON) ＜ 8mΩ (VGS = 4.5V).
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 + 5.55 0.15 -0.15 Unit: mm 1 Gate 2 D.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET NDT90N03 MOSFET ■ Features ● VDS (V) = 30V ● ID = 85 A (VGS = 10V) ● RDS(ON) ＜ 5mΩ (VGS = 10V) ● RDS(ON) ＜ 8mΩ (VGS = 4.5V) ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 + 5.55 0.15 -0.15 Unit: mm 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25℃ Tc=70℃ Power Dissipation Repetitive Avalanche Energy (Note.1) Thermal Resistance.
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