Datasheet4U Logo Datasheet4U.com

NDT6N60 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 6 A (VGS = 10V).
  • RDS(ON) ＜ 1.7Ω (VGS = 10V).
  • Low Gate Charge.
  • Low Reverse transfer capacitances +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.50 0.15 -0.15 + 0.2 8 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Sou.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDT014 N-Channel MOSFET VBsemi
NDT014 N-Channel MOSFET Fairchild
NDT014L N-Channel MOSFET Fairchild
NDT01N60 N-Channel Power MOSFET ON Semiconductor
NDT01N60T1G N-Channel Power MOSFET ON Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
NDT6N60P N-Channel MOSFET
NDT06N02 N-Channel MOSFET
NDT06N03 N-Channel MOSFET
NDT110N03 N-Channel MOSFET
NDT15N10 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET NDT6N60 MOSFET ■ Features ● VDS (V) = 600V ● ID = 6 A (VGS = 10V) ● RDS(ON) ＜ 1.7Ω (VGS = 10V) ● Low Gate Charge ● Low Reverse transfer capacitances +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.50 0.15 -0.15 + 0.2 8 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy ,Repetitive Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Thermal Resistance.