Datasheet Details
| Part number | KDS3912 |
|---|---|
| Manufacturer | Kexin Semiconductor |
| File Size | 59.49 KB |
| Description | 100V Dual N-Channel PowerTrench MOSFET |
| Datasheet |
 KDS3912 Datasheet
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Key Features
- 3 A, 100 V. RDS(ON) = 125m @ VGS = 10 V RDS(ON) = 135m @ VGS = 6 V Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (No.