1.3 A, 100 V. RDS(ON) = 480m @ VGS = 10 V RDS(ON) = 530m @ VGS = 6 V
Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation.
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SMD Type
ICIC
100V Dual N-Channel PowerTrench MOSFET KDS3601
Features
1.3 A, 100 V. RDS(ON) = 480m @ VGS = 10 V RDS(ON) = 530m @ VGS = 6 V
Low gate charge (3.
KDS3601 Datasheet
