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KDS3512 - 80V N-Channel PowerTrench MOSFET

Key Features

  • 4.0 A, 80 V. RDS(ON) = 70m @ VGS = 10 V RDS(ON) = 80m @ VGS = 6 V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temper.

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SMD Type 80V N-Channel PowerTrench MOSFET KDS3512 Features 4.0 A, 80 V. RDS(ON) = 70m @ VGS = 10 V RDS(ON) = 80m @ VGS = 6 V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) Symbol VDSS VGS ID PD TJ, TSTG R JA R JC Rating 80 20 4 30 2.5 1.2 1 -55 to 175 50 25 Unit V V A A W /W /W www.kexin.com.