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IRF630S - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 200V.
  • ID = 9 A (VGS = 10V).
  • RDS(ON) ＜ 400mΩ (VGS = 10V).
  • Fast switching.
  • Low thermal resistance d g s.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Peak Non-Repetitive Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy Thermal Resistance. Junction- to-Ambient Thermal Resistance Junction to Mounting Base Junction Temperature Stor.

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Full PDF Text Transcription (Reference)

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SMD Type N-Channel MOSFET IRF630S (KRF630S) MOSFET ■ Features ● VDS (V) = 200V ● ID = 9 A (VGS = 10V) ● RDS(ON) ＜ 400mΩ (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Peak Non-Repetitive Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy Thermal Resistance.Junction- to-Ambient Thermal Resistance Junction to Mounting Base Junction Temperature Storage Temperature Range Ta = 25℃ Ta = 100℃ Symbol VDS VDG VGS ID IDM IAS PD EAS RthJA RthJB TJ Tstg Rating 200 200 ±20 9 6.3 36 9 88 250 50 1.7 175 -55 to 175 Unit V A W mJ ℃/W ℃ www.kexin.com.