IRF630S
FEATURES
- ’Trench’ technology
- Low on-state resistance
- Fast switching
- Low thermal resistance
SYMBOL d
QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g
RDS(ON) ≤ 400 mΩ s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package
PINNING
PIN 1 2 3 tab gate drain1 source drain DESCRIPTION
SOT78 (TO220AB) tab
SOT404 (D2PAK) tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation...
