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2KK5116 - N-Channel MOSFET

Key Features

  • s.
  • VDSS = 100V.
  • ID = 53A.
  • RDS(ON) < 13mΩ @ VGS=10V.
  • RDS(ON) < 17mΩ @ VGS=4.5V.
  • Low RDS(ON).
  • 100% UIS Tested N-Channel MOSFET 2KK5116 TO-252 MOSFET D S G 1. Gate (G) 2. Drain (D) 3. Source (S).
  • Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Continuous Drain Current (Note 1) TC = 25℃ ID TC = 100℃ Pulsed Drain Current (Note 2) IDM Single Pulse Avalanche Energy (Note 3) EAS Th.

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SMD Type ■ Features ● VDSS = 100V ● ID = 53A ● RDS(ON) < 13mΩ @ VGS=10V ● RDS(ON) < 17mΩ @ VGS=4.5V ● Low RDS(ON) ● 100% UIS Tested N-Channel MOSFET 2KK5116 TO-252 MOSFET D S G 1. Gate (G) 2. Drain (D) 3. Source (S) ■ Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Continuous Drain Current (Note 1) TC = 25℃ ID TC = 100℃ Pulsed Drain Current (Note 2) IDM Single Pulse Avalanche Energy (Note 3) EAS Thermal Resistance, Junction-to-Ambient (Note 4) RθJA Thermal Resistance, Junction-to-Case RθJC Maximum Power Dissipation TC = 25℃ PD Operating Junction and Storage Temperature Range TJ,Tstg Notes 1. The max drain current rating is silicon limited 2.