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2KK5115DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60 V.
  • IDMAX = 80 A.
  • RDS(ON) < 7.5mΩ @ VGS=10V.
  • RDS(ON) < 9.5mΩ @ VGS=4.5V S S S G DFN5x6-8 D D D D.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25℃ 80 ID TC=100℃ 51 Continuous Drain Current TA=25℃ 10 ID TA=100℃ 8 Pulsed Drain Current (Note 1) TC=100℃ IDM 200 Diode Continuous Forward Current TC=25℃ IS 25 Av.

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SMD Type N-Channel MOSFET 2KK5115DFN MOSFET ■ Features ● VDS (V) = 60 V ● IDMAX = 80 A ● RDS(ON) < 7.5mΩ @ VGS=10V ● RDS(ON) < 9.5mΩ @ VGS=4.5V S S S G DFN5x6-8 D D D D ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25℃ 80 ID TC=100℃ 51 Continuous Drain Current TA=25℃ 10 ID TA=100℃ 8 Pulsed Drain Current (Note 1) TC=100℃ IDM 200 Diode Continuous Forward Current TC=25℃ IS 25 Avalanche Current, Single pulse (L=0.5mH) (Note 2) IAS 20 Avalanche Energy, Single pulse (L=0.5mH) (Note 2) EAS 100 Power Dissipation TC=25℃ PD TC=100℃ 52 20.8 Power Dissipation TA=25℃ 2 PD TA=100℃ 1.3 Thermal Resistance.