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RF1S30N06LESM - 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs

Features

  • 30A, 60V.
  • rDS(ON) = 0.047Ω.
  • 2kV ESD Protected.
  • Temperature Compensating PSPICE™ Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP3 0N06L E, RF1S3 0N06L ESM) /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan.

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📁 Similar Datasheet

Part Number Description Manufacturer
RF1S30N06LESM 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
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RF1S30N06LE 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs Harris
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Other Datasheets by Intersil (Renesas)

Part Number Description
RF1S30P05SM 30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs
RF1S30P06 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs
RF1S30P06SM P-Channel Power MOSFET
RF1S22N10SM 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RF1S25N06SM 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs

Full PDF Text Transcription

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RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49027. Features • 30A, 60V • rDS(ON) = 0.
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