Datasheet4U Logo Datasheet4U.com

RF1S30N06LE - N-Channel Enhancement-Mode Power MOSFETs

Description

The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 30A, 60V.
  • rDS(ON) = 0.047Ω.
  • 2kV ESD Protected.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.

📥 Download Datasheet

Datasheet Details

Part number RF1S30N06LE
Manufacturer Harris
File Size 90.96 KB
Description N-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RF1S30N06LE Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1S30N06LE 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
RF1S30N06LESM 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
RF1S30N06LESM 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
RF1S30P05SM 30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs Intersil Corporation
RF1S30P06 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs Intersil Corporation

Other Datasheets by Harris

Part Number Description
RF1S30N06LESM N-Channel Enhancement-Mode Power MOSFETs
RF1S30P05 P-Channel Enhancement-Mode Power MOSFET
RF1S30P05SM P-Channel Enhancement-Mode Power MOSFET
RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S50N06SM Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription

Click to expand full text
RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Features • 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Published: |