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RF1S50N06SM - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Download the RF1S50N06SM datasheet PDF. This datasheet also covers the RF1S50N06 variant, as both devices belong to the same avalanche rated n-channel enhancement-mode power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.

Features

  • 50A, 60V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RF1S50N06-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RF1S50N06SM
Manufacturer Harris
File Size 77.46 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RF1S50N06SM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor
RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Intersil Corporation
RF1S50N06SM N-Channel 60V MOSFET VBsemi
RF1S50N06LESM 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
RF1S22N10SM 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor

Other Datasheets by Harris

Part Number Description
RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S540 N-Channel Power MOSFETs
RF1S540SM N-Channel Power MOSFETs
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features • 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
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