Datasheet4U Logo Datasheet4U.com

RF1S540SM - N-Channel Power MOSFETs

Download the RF1S540SM datasheet PDF. This datasheet also covers the RF1S540 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.

The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.

Features

  • 25A and 28A, 80V and 100V.
  • rDS(ON) = 0.077Ω and 0.100Ω.
  • Single Pulse Avalanche Energy Rated.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RF1S540-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RF1S540SM
Manufacturer Harris
File Size 142.43 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet RF1S540SM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1S50N06LESM 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor
RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Intersil Corporation
RF1S50N06SM N-Channel 60V MOSFET VBsemi
RF1S22N10SM 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor

Other Datasheets by Harris

Part Number Description
RF1S540 N-Channel Power MOSFETs
RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S50N06SM Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription

Click to expand full text
Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421.
Published: |