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RF1S30P05SM - P-Channel Enhancement-Mode Power MOSFET

Download the RF1S30P05SM datasheet PDF. This datasheet also covers the RF1S30P05 variant, as both devices belong to the same p-channel enhancement-mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 30A, 50V.
  • rDS(ON) = 0.065Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RF1S30P05-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RF1S30P05SM
Manufacturer Harris
File Size 98.94 KB
Description P-Channel Enhancement-Mode Power MOSFET
Datasheet download datasheet RF1S30P05SM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1S30P05SM 30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs Intersil Corporation
RF1S30P06 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs Intersil Corporation
RF1S30P06SM P-Channel Power MOSFET Intersil Corporation
RF1S30P06SM P-Channel Power MOSFET Fairchild Semiconductor
RF1S30N06LE 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor

Other Datasheets by Harris

Part Number Description
RF1S30P05 P-Channel Enhancement-Mode Power MOSFET
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM N-Channel Enhancement-Mode Power MOSFETs
RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S50N06SM Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription

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SEMICONDUCTOR RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM December 1995 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Features • 30A, 50V • rDS(ON) = 0.065Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
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