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RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • 22A, 100V.
  • rDS(ON) = 0.080Ω.
  • UIS SOA Rating Curve (Single Pulse).
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP22N10 RF1S22N10SM.

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Full PDF Text Transcription

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RFP22N10, RF1S22N10SM Data Sheet July 1999 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9845. Features • 22A, 100V • rDS(ON) = 0.
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