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RF1S25N06SM - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs

Features

  • 25A, 60V.
  • rDS(ON) = 0.047Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP25N06 RF1S25N06SM.

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📁 Similar Datasheet

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Other Datasheets by Intersil (Renesas)

Part Number Description
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Full PDF Text Transcription

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RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Features • 25A, 60V • rDS(ON) = 0.
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