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HGTG20N50C1D - N-Channel IGBT

Description

The IGBT is a MOS gated high voltage switching device combining the best

Features

  • 20A, 500V.
  • Latch Free Operation.
  • Typical Fall Time < 500ns.
  • High Input Impedance.
  • Low Conduction Loss.
  • With Anti-Parallel Diode.
  • tRR < 60ns.

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Datasheet Details

Part number HGTG20N50C1D
Manufacturer Intersil Corporation
File Size 33.27 KB
Description N-Channel IGBT
Datasheet download datasheet HGTG20N50C1D Datasheet
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Full PDF Text Transcription

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HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features • 20A, 500V • Latch Free Operation • Typical Fall Time < 500ns • High Input Impedance • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.
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