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HGTG20N120C3D
Data Sheet October 1998 File Number
4508.1
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The diode used in anti-parallel with the IGBT was formerly developmental type TA49155.
HGTG20N120C3D Datasheet
