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HGTG20N120CND - N-Channel IGBT

Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.

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Datasheet Details

Part number HGTG20N120CND
Manufacturer Intersil Corporation
File Size 93.09 KB
Description N-Channel IGBT
Datasheet download datasheet HGTG20N120CND Datasheet
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HGTG20N120CND Data Sheet January 2000 File Number 4535.2 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49305.
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