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Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
April 1995
Features
• 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
HGTG20N120E2 Datasheet
