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BUZ76
Semiconductor
Data Sheet
October 1998
File Number 2264.1
3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
Features
• 3A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (3A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 400V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 1.800 • High Input Impedance Ohm, N- Formerly developmental type TA17404.
BUZ76 Datasheet
