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BUZ76
SIPMOS® POWER TRANSISTORS
FEATURE
• Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDS IDS IDM IAR EAR
EAS
VGS RDS(on) PT tJ tstg
Drain-Source Voltage
Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 35 mH, Tj = 25°C Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC RthJA
Thermal Resistance, chip case Thermal Resistance, chip to ambient
Value
400 3 12 3 5
180
20 1.
BUZ76 Datasheet
