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BUZ76A
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ76A
Voss 400 V
RoS(on) 2.50
10 2.6 A
• HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS
• ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH
N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Applications include off-line use, constant current source, ultrasonic equipment and switching power supply start-up circuits.
BUZ76A Datasheet
