Datasheet4U Logo Datasheet4U.com

IRLU3915 - Power MOSFET

Download the IRLU3915 datasheet PDF. This datasheet also covers the IRLR3915PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 14mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3915PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU3915 N-Channel MOSFET INCHANGE
IRLU3103 N-Channel MOSFET INCHANGE
IRLU3105 N-Channel MOSFET INCHANGE
IRLU3110Z N-Channel MOSFET INCHANGE
IRLU3114Z N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU3915PBF Power MOSFET
IRLU3103 Power MOSFET
IRLU3105 HEXFET Power MOSFET
IRLU3105PBF HEXFET Power MOSFET
IRLU3110ZPBF Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 95090B IRLR3915PbF IRLU3915PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 14mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Published: |