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IRLU3636PBF - Power MOSFET

Download the IRLU3636PBF datasheet PDF. This datasheet also covers the IRLR3636PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • dth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs. Pulsewidth 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 50A 150 100 50 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR3636PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PD - 96224 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRLR3636PbF IRLU3636PbF HEXFET® Power MOSFET D Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free GD S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 5.4m: 6.
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