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PD - 96898
RADIATION HARDENED
IRHYK57133CMSE
POWER MOSFET
130V, N-CHANNEL
5SURFACE MOUNT (Low-Ohmic TO-257AA) TECHNOLOGY
Product Summary
Part Number
Radiation Level
IRHYK57133CMSE 100K Rads (Si)
RDS(on) 0.082Ω
ID 20A
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHYK57133CMSE Datasheet
