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IRHY53230CM - RADIATION HARDENED POWER MOSFET THRU-HOLE

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse.

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Datasheet Details

Part number IRHY53230CM
Manufacturer International Rectifier
File Size 144.97 KB
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Datasheet download datasheet IRHY53230CM Datasheet
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www.DataSheet4U.com PD - 93827A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level IRHY57230CM 100K Rads (Si) IRHY53230CM 300K Rads (Si) IRHY54230CM 600K Rads (Si) IRHY58230CM 1000K Rads (Si) RDS(on) 0.21Ω 0.21Ω 0.21Ω 0.26Ω ID 12.5A 12.5A 12.5A 12.5A IRHY57230CM 200V, N-CHANNEL 4 # TECHNOLOGY c TO-257AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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