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IRHY54130CM - (IRHY5x130CM) RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHY54130CM, a member of the IRHY53130CM (IRHY5x130CM) RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á.

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Datasheet Details

Part number IRHY54130CM
Manufacturer International Rectifier
File Size 156.02 KB
Description (IRHY5x130CM) RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRHY54130CM Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 93826D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) RDS(on) 0.07Ω 0.07Ω 0.07Ω ID 18A* 18A* 18A* 18A* QPL Part Number JANSR2N7484T3 JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3 IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL REF: MIL-PRF-19500/702 TECHNOLOGY 5 ™ IRHY58130CM1000K Rads (Si) 0.085Ω TM TO-257AA International Rectifier’s R5 technology provides high performance power MOSFETs for space applications.These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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