IRHY53034CM - RADIATION HARDENED POWER MOSFET THRU-HOLE
Features
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á.
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PD - 93825D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω IRHY53034CM 300K Rads (Si) IRHY54034CM 500K Rads (Si) IRHF58034CM 1000K Rads (Si) 0.04Ω 0.04Ω 0.048Ω
IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL
REF: MIL-PRF-19500/702
5
TECHNOLOGY
ID QPL Part Number 18A* JANSR2N7483T3 18A* JANSF2N7483T3 18A* JANSG2N7483T3 18A* JANSH2N7483T3
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).