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IRHYB9A97230CM - Radiation Hardened Power MOSFET

This page provides the datasheet information for the IRHYB9A97230CM, a member of the IRHYS9A97230CM Radiation Hardened Power MOSFET family.

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology.

Features

  • Single event effect (SEE) hardened (up to LET of 90.5 MeV.
  • cm2/mg).
  • Improved SOA for linear mode operation.
  • Low RDS(on).
  • Improved avalanche energy.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • ESD rating: class 2 per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: -200V.
  • ID : -14A.
  • RDS(on),max : 175mī—.
  • QG,max : 49nC.
  • REF: MIL-PRF-19500/780 Potential.

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Full PDF Text Transcription

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IRHYS9A97230CM, IRHYB9A97230CM PD-97960B Radiation Hardened Power MOSFET Thru-Hole (Low-Ohmic TO-257AA) -200V, -14A, P-channel, R9 Superjunction Technology Features ī‚ˇ Single event effect (SEE) hardened (up to LET of 90.
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