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PD - 95819
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597Z30CM
30V, P-CHANNEL
5 TECHNOLOGY
Product Summary Part Number Radiation Level IRHYB597Z30CM 100K Rads (Si) IRHYB593Z30CM 300K Rads (Si)
RDS(on) 0.048Ω 0.048Ω
ID -20A* -20A*
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control.
IRHYB597Z30CM Datasheet
