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IRHYB597034CM - RADIATION HARDENED POWER MOSFET

Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-So.

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Full PDF Text Transcription

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PD-97000 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) IRHYB597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHYB597034CM 100K Rads (Si) IRHYB593034CM 300K Rads (Si) RDS(on) 0.087Ω 0.087Ω ID -20A -20A Low-Ohmic TO-257AA (Tab-less) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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