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IRHY67434CM - RADIATION HARDENED POWER MOSFET

Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Vo.

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Full PDF Text Transcription

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PD-97805 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) IRHY67434CM 550V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHY67434CM 100K Rads (Si) IRHY63434CM 300K Rads (Si) RDS(on) 3.0Ω 3.0Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
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